Semiconductor device and fabricating method thereof
AssigneeUnited Microelectronics Corp.
InventorKai-Kuen Chang
Life of this patent
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Abstract
A semiconductor device and a method of fabricating the same includes a substrate, two first field regions, a gate structure, a first isolation structure, and a plurality of second field regions. The two first field regions are disposed in the substrate, and the gate structure is disposed on the substrate, between the two first field regions. The first isolation structure is disposed in one of the two first field regions, under one side of the gate structure. The second field regions are disposed in the substrate, wherein the second field regions are separately and sequentially arranged to surround an outer periphery of the one of the two first field regions.
Claims13
A semiconductor device, comprising:
- a substrate;
- two first field regions, disposed in the substrate;
- a gate structure, disposed on the substrate, between the two first field regions;
- a first isolation structure, disposed in one of the two first field regions, under a first side of the gate structure;
- a plurality of second field regions, disposed in the substrate, the second field regions being separately arranged to surround an outer periphery of the one of the two first field regions;
- and
- a first diffusion region disposed in the substrate to surround the two first field regions, the gate structure, and the first isolation structure, wherein the first diffusion region is partially overlapped with the second field regions.
A semiconductor device, comprising:
- a high-voltage terminal;
- a diffusion region surrounding the semiconductor device;
- and
- a plurality of field regions separately arranged along an outer periphery of the high-voltage terminal to surround the high-voltage terminal, wherein the field regions and the diffusion region have a same conductive type and are partially overlapped with each other.
Dependencies are inferred from the claim text.