Semiconductor device integrating a high electron mobility transistor and a resistor

A semiconductor device, comprising:

• a high electron mobility transistor, disposed in an annular active element region and comprising:
• a first portion of a compound semiconductor channel layer;
• a first portion of a compound semiconductor barrier layer stacked on the first portion of the compound semiconductor channel layer;
• and
• a source electrode, a gate electrode and a drain electrode, disposed on the first portion of the compound semiconductor barrier layer;
• and
• a resistor, disposed in a passive element region surrounded by the annular active element region and comprising:
• a second portion of the compound semiconductor channel layer;
• a second portion of the compound semiconductor barrier layer stacked on the second portion of the compound semiconductor channel layer;
• and
• an input terminal electrode, disposed on the second portion of the compound semiconductor barrier layer and located at the center of the passive element region.