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US 12,633,891 B2Granted
Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorsKatsuya Daimon, Hideki Iwamoto
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AssigneeMurata Manufacturing Co., Ltd.
InventorsKatsuya Daimon, Hideki Iwamoto
Estimating the term…
An acoustic wave device includes a silicon substrate, a first high-acoustic-velocity film on the silicon substrate, a first low-acoustic-velocity film on the first high-acoustic-velocity film, a second low-acoustic-velocity film on the first low-acoustic-velocity film, a second high-acoustic-velocity film on the second low-acoustic-velocity film, a piezoelectric film on the second high-acoustic-velocity film, and an IDT electrode on the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second high-acoustic-velocity films are higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second low-acoustic-velocity films are lower than an acoustic velocity of a bulk wave propagating through the piezoelectric film. Materials of the first and second low-acoustic-velocity films are different from each other.
An acoustic wave device comprising:
Dependencies are inferred from the claim text.