Unitized laser chip with double topological structures

A unitized laser chip (400) with double topological structures, comprising a first topological structure (100), a second topological structure (200) and a substrate (300),

• the first topological structure (100) and the second topological structure (200) are arranged on the substrate (300), and the unitized laser chip (400) is formed by the first topological structure (100), the second topological structure (200) and the substrate (300),
• the first topological structure (100) comprises a first active area (110), a first electrode pad (120) and a first wire (130) connected between the first active area (110) and the first electrode pad (120),
• similar to the first topological structure (100), the second topological structure (200) comprises a second active area (210), a second electrode pad (220) and a second wire (230) connected between the second active area (210) and the second electrode pad, the first topological structure (100) and the second topological structure (200) are obliquely arranged on the substrate (300)
• wherein, an area on the substrate (300) between the first active area (110) and the second active area (210) is a functional area (310), an area outside the functional area (310) is an empty avoidance area (320), the first electrode pad (120), the first wire (130), the second electrode pad (220) and the second wire (230) are all disposed in the functional area (310),
• wherein, the substrate (300) has a transverse side and a vertical side, the transverse side comprises a top side (330) and a bottom side (340), the vertical side comprises a left side (350) and a right side (360) that are two sides of a top face (370) on which the first topological structures (100) and the second topological structures (200) are disposed,
• a connecting line between the first active area (110) and the center of the first electrode pad (120) is a first inclined line (131) and the connecting line between the second active area (210) and the center point of the second electrode pad (220) is a second inclined line (231),
• the first inclined line (131) intersects an edge of the top side (330) to form a first angle A1 and the second inclined line (231) intersects the edge of the top side (330) to form a second angle A2,
• the length of the transverse side is L and the length of the vertical side is W,
• the distance between the center points of the first active area (110) and the second active area (210) on the unitized laser chip (400) is D1 which is a fixed value,
• when several of the unitized laser chips (400) are arranged on a wafer, for any two unitized laser chips (400) adjacent left and right, the distance between the center points of the first active area (110) of one unitized laser chips (400) and the second active area (210) of the other unitized laser chip (400) is D2,
• when several of the unitized laser chips (400) are arranged on a wafer, for any two unitized laser chips (400) adjacent above and below, the distance between the center points of the first active areas (110) of the two unitized laser chips (400) is D3,
• the distance between the center points of the first electrode pad (120) and the second electrode pad (220) on one of the unitized laser chips (400) is D4,
• the diameters of the first electrode pad (120) and the second electrode pad (220) are D5,
• the center points of the first active area (110) and the second active area (210) are at a vertical distance D6 from the nearest lateral side,
• the center points of the first electrode pad (120) and the second electrode pad (220) are at a vertical distance D7 from the nearest lateral side,
• the distance between the edges of the first electrode pad (120) and the second electrode pad (220) on one of unitized laser chips (400) is D8,
• wherein, the calculation formula between A1, A2, W, L, D1, D2, D3, D4, D5, D6, D7, D8 is,
• D1 is a fixed value, L=D1+D2, W=D3, D4=D5+D8,
• W=D6+D7+[(D1−D4)/2]×tan A1,
• wherein if A1=A2, A1 takes value A1 or A2, if A1 #A2, A1 takes the larger absolute value of A1 and A2.