Plasma processing device and plasma processing method

A plasma processing device comprising:

• a chamber;
• an upper electrode;
• a showerhead provided below the upper electrode, which divides an internal space of the chamber into a first space between the upper electrode and the showerhead and a second space below the showerhead, wherein the showerhead provides a plurality of introduction ports for introducing a gas into the second space and a plurality of openings penetrating the showerhead so that the first space and the second space are in communication with each other, the showerhead being grounded;
• a substrate support portion including an electrode and configured to support a substrate in the second space;
• an ion trap made of a dielectric and provided between the upper electrode and the showerhead, wherein the ion trap provides a plurality of through holes arranged not to align with the plurality of openings of the showerhead;
• a first gas supply portion configured to supply a gas to a region in the first space between the upper electrode and the ion trap;
• a second gas supply portion configured to supply the showerhead with a gas to be introduced from the plurality of introduction ports into the second space;
• a conductive member extended directly on a lateral side of the region in the first space, configured to be exposed to the gas in the region in the first space, and electrically connected to the showerhead;
• a first power source configured to produce a first power for generating plasma, and connected to the upper electrode;
• and
• a second power source configured to produce a second power for generating plasma, and connected to the electrode of the substrate support portion.