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US 12,633,364 B2Granted
Encoded read-only memory and decoder
AssigneeQUALCOMM Incorporated
InventorsChulmin Jung, Anil Chowdary Kota, Kuk-Hwan Kim, Sung Son
Life of this patent
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Abstract
A drain programmed read-only memory includes a plurality of bit lines for each drain-programmed transistor. In addition, the drain-programmed read-only memory includes a pair of ground lines for each drain-programmed transistor. A decoder decodes a plurality of bits from each drain-programmed transistor by determining which bit line (if any) and which ground line is coupled to the drain-programmed transistor.
Claims9
A decoder for a read-only memory, comprising:
- a first logic circuit configured to process a voltage of at least a first bit line during a first sensing phase of a word line assertion period to decode a first bit;
- and
- a second logic circuit configured to process both the voltage of the first bit line and a voltage of a second bit line during a second sensing phase of the word line assertion period to decode a second bit,
- wherein first bit line and the second bit line are included with a first bank, and wherein the second logic circuit comprises:
- a first logic gate configured to process the voltage of the first bit line with a voltage of a first bit line of a second bank to provide a first output signal;
- a second logic gate configured to process the voltage of the second bit line with a voltage of a second bit line of the second bank to provide a second output signal;
- and
- a third logic gate configured to process the first output signal and the second output signal to provide the first bit.
5 more elements
Dependencies are inferred from the claim text.