Resist underlayer film-forming composition
AssigneeNissan Chemical Corporation
InventorsHikaru Tokunaga, Hiroto Ogata, Tomotada Hirohara, Makoto Nakajima
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AssigneeNissan Chemical Corporation
InventorsHikaru Tokunaga, Hiroto Ogata, Tomotada Hirohara, Makoto Nakajima
Estimating the term…
A composition for forming a resist underlayer film includes: (A) a cross-linking compound that is represented by formula (I); and (D) a solvent. [In formula (I), m is an integer from 1 to 30, T is a single bond, a saturated hydrocarbon group, an aromatic group, or an unsaturated cyclic hydrocarbon group, G1, G2, G3, G4, G5, and G6 are each independently (i) or (ii), the n's are each independently an integer from 1 to 8, the n R's are each independently a hydrogen atom, an aliphatic hydrocarbon group, or an alicyclic hydrocarbon group, the A's are each independently an aryl group that may be interrupted by an alkylene group, and Z1, Z2, Z3, Z4, Z5, and Z6 are each independently an alkyl group, an aryl group, a hydroxy group, an epoxy group, or a hydrogen atom.]
A resist underlayer film, which is a cured product of a coating film formed of a resist underlayer film-forming composition,
A method of manufacturing a patterned substrate, comprising:
A method of manufacturing a semiconductor device, comprising:
A compound selected from the group consisting of the following formulas (1-21) to (1-25):
A compound selected from the group consisting of the following formulas (1-1)-(1-7):
A compound selected from the group consisting of the following formulas (1-8)-(1-11) and (1-13):
Dependencies are inferred from the claim text.