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US 12,631,911 B2Granted
Integration of advanced photonic materials in silicon photonic platform
AssigneeCisco Technology, Inc.
InventorsVipulkumar K. Patel, Ming Gai Stanley Lo, Mark A. Webster, Farnood Khalilzadeh Rezaie
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Abstract
Embodiments herein describe a photonic platform having a chiplet with a Pockels effect electro-optic layer made of LN or BTO and a substrate. The chiplet is bonded to a photonic wafer which includes a waveguide. In this manner, a ridge waveguide formed by the Pockels effect electro-optic layer and the waveguide utilizes electro-optic effects to tune a signal.
Claims19
A method of manufacturing a photonic platform, comprising:
- providing a chiplet comprising:
- a Pockels effect electro-optic layer, and
- a substrate,
- the method further comprising:
- bonding the chiplet to a photonic wafer such that the Pockels effect electro-optic layer is optically coupled to a waveguide disposed within the photonic wafer;
- forming a first electrode to form an electrical connection with a first insulator layer distal from a midline of the chiplet or with the Pockels effect electro-optic layer;
- forming a metal routing layer, comprising:
- a first metal connection electrically coupled to the first electrode, wherein the first electrode is arranged between the metal routing layer and the electro-optic layer;
- forming a second electrode, the second electrode extending from the photonic wafer to the first metal connection;
- and
- removing the substrate after bonding the chiplet to the photonic wafer.
8 more elements
A silicon photonic platform comprising:
- a semiconductor wafer comprising a waveguide;
- a Pockels effect electro-optic layer disposed over, and optically coupled to, the waveguide;
- a first electrode electrically coupled to a first end of the Pockels effect electro-optic layer;
- a second electrode electrically coupled to a second end of the Pockels effect electro-optic layer wherein a wafer bondline is disposed between the Pockels effect electro-optic layer and the waveguide;
- a first metal routing layer, comprising:
- a first metal connection electrically coupled to the first electrode, wherein the first electrode is arranged between the first metal routing layer and the electro-optic layer;
- and
- a third electrode extending from the semiconductor wafer to the first metal connection.
5 more elements
Dependencies are inferred from the claim text.