Optical semiconductor device, optical modulator and optical transmission device

Abstract

An optical semiconductor device according to the disclosure includes a first cladding layer, a quantum well active layer provided on the first cladding layer, a second cladding layer provided on the quantum well active layer and having a conductive type different from a conductive type of the first cladding layer, a heater electrode provided on the second cladding layer, a bias control circuitry configured to heat the quantum well active layer by applying bias to the heater electrode to adjust a phase of light propagating through the quantum well active layer, and a reverse bias control circuitry configured to apply reverse bias to the quantum well active layer to adjust an amplitude of the light propagating through the quantum well active layer.

Dependencies are inferred from the claim text.