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US 12,631,591 B2Granted
Semiconductor device, electronic device, pH sensor, biosensor, method for manufacturing semiconductor device, and method for manufacturing electronic device
AssigneeNikon Corporation
InventorMakoto Nakazumi
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Abstract
A semiconductor device includes a first electrode, a second electrode, and a semiconductor layer in contact with the first electrode and the second electrode. The semiconductor layer includes a first oxide layer of 5 to 20 nm containing spinel-type ZnGa2O4, and a second oxide layer of 5 to 50 nm containing In, Ga, and Zn.
Claims10
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- and
- a semiconductor layer in contact with the first electrode and the second electrode, wherein
- the semiconductor layer includes a first oxide layer of 5 to 20 nm containing spinel-type ZnGa2O4, and a second oxide layer of 5 to 50 nm containing In, Ga, and Zn.
2 more elements
Dependencies are inferred from the claim text.