Methods and apparatus for ambient light sensor with spectral resolution

An ambient light sensor, comprising:

• a photodiode, comprising:
• a plurality of p-doped regions interleaved horizontally with a plurality of n-doped regions, the junctions between the plurality of p-doped regions and the plurality of n-doped regions forming a first lateral diode;
• an n-doped layer disposed below and in contact with the plurality of p-doped regions and the plurality of n-doped regions, the junctions between the plurality of p-doped regions and the n-doped layer forming a first vertical diode;
• a p-doped layer disposed below and in contact with the n-doped layer, the junction the p-doped layer and the n-doped layer forming a second vertical diode and a second lateral diode;
• a first terminal electrically coupled to the plurality of p-doped regions;
• a second terminal electrically coupled to the plurality of n-doped regions;
• a third terminal electrically coupled to the n-doped layer;
• and a fourth terminal electrically coupled to the p-doped layer;
• and
• control circuitry electrically coupled to the first terminal, the second terminal, the third terminal, and the fourth terminal of the photodiode, the control circuitry configured to use the photodiode to sense ambient light with spectral resolution.

An ambient light sensor, comprising:

• a photodiode, comprising:
• a first plurality of p-doped regions interleaved horizontally with a first plurality of n-doped regions, the junctions between the first plurality of p-doped regions and the first plurality of n-doped regions forming a first lateral diode;
• and
• a second plurality of p-doped regions below and in contact with the first plurality of n-doped regions and interleaved with a second plurality of n-doped regions below and in contact with the first plurality of p-doped regions, the junctions between the second plurality of p-doped regions and the second plurality of n-doped regions forming a second lateral diode, the junctions between the first plurality of p-doped regions and the second plurality of n-doped regions forming a first vertical diode, and the junctions between the second plurality of p-doped regions and the first plurality of n-doped regions forming a second vertical diode;
• a first terminal electrically coupled to the first plurality of p-doped regions;
• a second terminal electrically coupled to the first plurality of n-doped regions;
• a third terminal electrically coupled to the second plurality of p-doped regions;
• a fourth terminal electrically coupled to the second plurality of n-doped regions;
• and
• control circuitry electrically coupled to the first terminal, the second terminal, the third terminal, and the fourth terminal of the photodiode, the control circuitry configured to use the photodiode to sense ambient light with spectral resolution.

An ambient light sensor, comprising:

• a photodiode, comprising:
• a plurality of p-doped regions interleaved horizontally with a plurality of n-doped regions, the junctions between the plurality of p-doped regions and the plurality of n-doped regions forming a lateral diode;
• and
• a p-doped layer disposed below and in contact with the plurality of p-doped regions and the plurality of n-doped regions the junctions between the plurality of n-doped regions and the p-doped layer forming a vertical diode;
• a first terminal electrically coupled to the plurality of p-doped regions;
• a second terminal electrically coupled to the plurality of n-doped regions;
• a third terminal electrically coupled to the p-doped layer;
• and
• control circuitry electrically coupled to the first terminal, the second terminal, and the third terminal of the photodiode, the control circuitry configured to use the photodiode to sense ambient light with spectral resolution.