Consumable component treating apparatus and semiconductor manufacturing equipment
AssigneeSemes Co., Ltd.
InventorSun Il Kim
Life of this patent
Estimating the term…
Abstract
Provided is a consumable component treating apparatus for ensuring coating thickness uniformity and a semiconductor manufacturing equipment including the same. The consumable component treating apparatus comprises a housing; a process gas providing unit for providing process gas to an interior of the housing; a plasma generating unit including a high-frequency power source and for generating plasma inside the housing using the process gas; a holder for fixing a base material; a metal substrate for supporting the holder; and a support module for supporting a target material coated on a base material using the plasma.
Claims14
An apparatus for processing a component comprising:
- a housing;
- a process gas providing unit configured to provide process gas to an interior of the housing;
- a plasma generating unit including a high-frequency power source and configured to generate plasma inside the housing using the process gas;
- a holder configured to fix a base material, the holder being a ceramic material;
- a metal substrate adjacent to the holder opposite and separated from the base material;
- a support shaft configured to electrically connect the metal substrate and the high-frequency power source;
- and
- a support module configured to support a target material, the plasma generating unit configured to generate the plasma to coat the target material on the base material via sputtering,
- wherein the metal substrate is configured to be bendable relative to the holder,
- wherein the metal substrate is bendable in a first bending direction and a second bending direction,
- wherein, based on the target material being coated on a center area of the base material, the metal substrate is configured to alter a distance between an edge area of the metal substrate and the holder, and
- wherein the metal substrate is configured to alter a distance between a center area of the metal substrate and the holder based on the metal substrate being bent in the first bending direction or the second bending direction.
An apparatus for processing a component comprising:
- a housing;
- a process gas providing unit configured to provide process gas to an interior of the housing;
- a plasma generating unit including a high-frequency power source and configured to generate plasma inside the housing using the process gas;
- a holder configured to fix a base material;
- a metal substrate adjacent to the holder, separated from the base material, the metal substrate is configured to bend;
- a support module configured to support a target material, the plasma generating unit configured to generate the plasma to coat the target material on the base material via sputtering;
- a support shaft configured to electrically connect the metal substrate and the high-frequency power source;
- a thin film thickness measurement module configured to measure a thickness of a coating layer formed on the base material by the target material;
- and
- a process controller configured to control the apparatus to bend the metal substrate based on a result of measuring the thickness of the coating layer,
- wherein the metal substrate is configured to bend in a first bending direction to reduce a center distance between a center area of the metal substrate and the holder and to increase an edge distance between an edge area of the metal substrate and the holder, and
- wherein the metal substrate is configured to bend in a second bending direction to increase the center distance and reduce the edge distance.
Dependencies are inferred from the claim text.