Back to results
US 12,630,917 B2Granted
Sputtering target and method for producing same
AssigneeJX Advanced Metals Corporation
InventorsDaiki Shono, Shuhei Murata, Takeo Okabe
Life of this patent
Estimating the term…
Abstract
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 μm or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.
Claims14
A cylindrical sputtering target, wherein:
- the sputtering target comprises at least a target material;
- the target material is formed of one or more metal elements or alloys selected from the group consisting of Ti, Nb, Ta, Co, Ti alloys, Nb alloys, Ta alloys, and Co alloys;
- the target material has a crystal grain size of 50 μm or less;
- the target material has an oxygen concentration of 1000 ppm by mass or less;
- an amount of Cu in the target material is less than 0.01% by mass;
- and,
- the sputtering target comprises no substrate.
4 more elements
A cylindrical sputtering target, wherein:
- the sputtering target comprises at least a target material;
- the target material is composed of an ingot formed of one or more metal elements or alloys selected from the group consisting of Ti, Nb, Ta, Co, Ti alloys, Nb alloys, Ta alloys, and Co alloys;
- the target material has a crystal grain size of 50 μm or less;
- the target material has an oxygen concentration of 1000 ppm by mass or less;
- and,
- an amount of Cu in the target material is less than 0.01% by mass.
3 more elements
Dependencies are inferred from the claim text.