Stress control method for physical vapor deposition of aluminum
AssigneeApplied Materials, Inc.
InventorsYaoying Zhong, Haomin Xu, Siew Kit Hoi, Jay Min Soh, Xiao Tan, Li Ying Choo
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Abstract
Provided are methods of reducing the stress of a semiconductor wafer. The method includes exposing depositing an aluminum layer on a top surface of a substrate; and cooling the substrate to a temperature of less than or equal to 20° C., or less than or equal to 10° C., or less than or equal to 0° C., or less than or equal to −20° C. In some embodiments, the method is conducted within a processing tool, e.g., a cluster tool.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- cooling a substrate under vacuum to a temperature in a range of from 50° C. to 150° C. to form a cooled substrate;
- subsequently depositing an aluminum layer directly on a top surface of the cooled substrate to form a substrate having an aluminum layer directly thereon, the aluminum layer having a thickness in a range of from 1 μm to 6 μm;
- and
- subsequently cooling the substrate having the aluminum layer directly thereon under vacuum on a sub-zero cooling pedestal to a temperature less than or equal to −20° C.
A method of reducing stress on a semiconductor substrate, the method comprising:
- exposing the semiconductor substrate to a vacuum in a first processing chamber;
- cooling the semiconductor substrate in a second processing chamber to a temperature in a range of 50° C. to 150° C. to form a cooled semiconductor substrate;
- depositing an aluminum layer directly on a top surface of the cooled semiconductor substrate, the semiconductor substrate in a first deposition chamber to form a semiconductor substrate having an aluminum layer directly thereon, the aluminum layer having a thickness in a range of from 1 μm to 6 μm;
- and
- cooling the semiconductor substrate having the aluminum layer directly thereon in a third processing chamber under vacuum on a sub-zero cooling pedestal to a temperature less than or equal to −20° C.
Dependencies are inferred from the claim text.