Back to results
US 12,630,568 B2Granted
Low halide lanthanum precursors for vapor deposition
AssigneeVersum Materials US, LLC
InventorsNeil Osterwalder, Sergei V. Ivanov
Life of this patent
Estimating the term…
Abstract
Lanthanide compounds for vapor deposition having ≤50.0 ppm, ≤30.0 ppm, or ≤10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.
Claims10
A vessel containing a composition comprising a lanthanide amidinate compound Ln(AMD)3 having the following Formula I:
- wherein R1 is selected from the group consisting of hydrogen and C1 to C5 linear or branched alkyl;
- wherein R2 and R3 each is independently selected from the group consisting of C1 to C5 linear or branched alkyl;
- wherein Ln is La;
- wherein the composition further comprises at least one bromide impurity and the concentration of the at least one bromide impurity ranges from greater than 0.00 ppm, and less than, or equal to, 10.0 ppm;
- wherein the vessel comprises an inner wall comprising stainless steel;
- and
- wherein the lanthanide amidinate compound Ln(AMD)3 having the Formula I is in contact with the inner wall comprising stainless steel.
4 more elements
A semiconductor manufacturing process precursor storage container, comprising:
- an organometallic precursor mixture, wherein the organometallic precursor mixture comprises:
- La(FAMD)3;
- at least one bromide compound, wherein the concentration of the at least one bromide compound is greater than 0.00 ppm, and less than, or equal to, 10.0 ppm;
- wherein the semiconductor manufacturing process storage container comprises an inner wall comprising stainless steel;
- and
- wherein the La(FAMD)3 is in contact with the inner wall comprising stainless steel.
3 more elements
Dependencies are inferred from the claim text.