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AssigneeSamsung Electronics Co., Ltd.
InventorsChanghwan Kim, Takafumi Noguchi, Toshihiro Iizuka, Younseon Wang, Kenichi Nagayama
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Provided are a sintered material having high corrosion resistance, a method of manufacturing the sintered material, a member for a semiconductor manufacturing apparatus, a method of manufacturing a member for a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus, and a method of manufacturing a semiconductor manufacturing apparatus. The sintered material according to an embodiment includes 50 mass % or more of yttrium oxyfluoride, has a relative density of 97.0% or more, and has a Vickers hardness of 5.0 GPa or more. The method of manufacturing a sintered material according to an embodiment includes forming a molded body including yttrium oxyfluoride powder having a particle size of 0.3 μm or less, and sintering the molded body under an atmospheric pressure at a temperature of 800° C. or less.
A sintered material comprising 50 mass % or more of yttrium oxyfluoride and having a relative density of 97.0% or more and a Vickers hardness of 5.0 GPa or more, wherein the sintered material further comprises yttrium fluoride including an orthorhombic YF3 phase.
Dependencies are inferred from the claim text.