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US 12,630,456 B2Granted
Method of manufacturing sapphire cover window and sapphire cover window manufactured thereby
AssigneeUti Inc.
InventorsJae Young Hwang, Hak Chul Kim, Hyunho Kim, Yong Bae Na
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Abstract
Proposed are a method of manufacturing a sapphire cover window, which includes: preparing a sapphire wafer; forming a cell edge processing portion on the sapphire wafer with a laser beam; forming an etched portion on the sapphire wafer by selectively performing wet etching on the cell edge processing portion; and separating a cell from the sapphire wafer by compressing the sapphire wafer on which the etched portion are formed, and a sapphire cover window manufactured thereby.
Claims12
A method of manufacturing a sapphire cover window, the method comprising:
- preparing a sapphire wafer;
- forming a cell edge processing portion on the sapphire wafer with a laser beam;
- forming an etched portion on the sapphire wafer by selectively performing a wet etching on the cell edge processing portion;
- and
- separating a cell from the sapphire wafer by applying a compressive force after completion of all wafer-level processes, the etched portion on the sapphire wafer being formed such that the sapphire wafer remains as an integral wafer during printing, coating, and cleaning processes prior to the separation wherein in the forming of the etched portion, a NaOH aqueous solution, a KOH aqueous solution, or a mixture of both is used as an etchant,
- wherein when using the NaOH aqueous solution as the etchant, the wet etching is performed under the following conditions:
- a concentration of the NaOH aqueous solution in a range of 50% to 95%, corresponding to a temperature in a range of 130° C. to 220° C., and an etching time in a range of 1 to 48 hours, and the conditions of the wet etching are adjusted in consideration of a thickness and size of the cell so that the cell is kept from being separated during the wafer-level processes, and
- wherein when using the KOH aqueous solution as the etchant, the wet etching is performed under the following conditions:
- a concentration of the KOH aqueous solution in a range of 40% to 90%, corresponding to a temperature in a range of 130° C. to 220° C., and an etching time in a range of 10 minutes to 20 hours, and the conditions of the wet etching are adjusted in consideration of a thickness and size of the cell so that the cell is kept from being separated during the wafer-level processes.
6 more elements
Dependencies are inferred from the claim text.