Power semiconductor module arrangement and housing for a power semiconductor module arrangement

A method, comprising:

• arranging at least one substrate on a heat sink or base plate, wherein each of the at least one substrate comprises a dielectric insulation layer and a first metallization layer arranged on a first side of the dielectric insulation layer;
• arranging a housing on the heat sink or base plate, wherein the housing comprises sidewalls, a cover, and at least one press-on element,
• wherein arranging the housing on the heat sink or base plate comprises:
• arranging the sidewalls on the at least one substrate such that the sidewalls extend along an outer circumference of the at least one substrate;
• arranging the cover on the sidewalls such that the at least one press-on element is arranged between and directly adjoins the sidewalls and the cover;
• and
• attaching the housing to the heat sink or base plate,
• wherein when the housing is attached to the heat sink or base plate, the sidewalls of the housing exert pressure on the at least one substrate such that the at least one substrate is pressed onto the heat sink or base plate, the cover exerts pressure on the sidewalls such that the sidewalls are pressed onto the at least one substrate, and each of the at least one press-on element is compressed by the pressure that is exerted on the sidewalls by the cover.

A housing, comprising:

• sidewalls;
• a cover;
• and
• at least one press-on element arranged between and directly adjoining the sidewalls and the cover, wherein each of the at least one press-on element is compressed when pressure is exerted on the sidewalls by the cover.