Bonding systems for bonding a semiconductor element to a substrate, and related methods
AssigneeKulicke and Soffa Industries, Inc.
InventorsAdeel Ahmad Bajwa, Thomas J. Colosimo, Jr., Matthew B. Wasserman, Robert N. Chylak
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Abstract
A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a manifold configured to provide a reducing gas to a bonding area of the bonding system. At least a portion of the manifold is heated.
Claims20
A bonding system for bonding a semiconductor element to a substrate, the bonding system comprising:
- a manifold configured to provide a reducing gas to a bonding area of the bonding system;
- and
- a heating element for heating at least a portion of the manifold, according to a heat profile,
- wherein the heat profile includes a time-based heating process having a first temperature setpoint prior to bonding and a second temperature setpoint during bonding.
A method of bonding a semiconductor element to a substrate, the method comprising the steps of:
- (a) directing a reducing gas from a reducing gas source to a manifold of a bonding system, the manifold distributing the reducing gas to a bonding area of the bonding system;
- (b) heating the manifold according to a heat profile with a heating element, wherein the heat profile includes a time-based heating process having a first temperature setpoint prior to bonding and a second temperature setpoint during bonding;
- and
- (c) bonding a semiconductor element to a substrate at the bonding area.
A bonding system for bonding a semiconductor element to a substrate, the bonding system comprising:
- a manifold configured to provide a reducing gas to a bonding area of the bonding system during a bonding operation;
- a heating element for heating at least a portion of the manifold;
- and
- a bonding tool configured to carry the semiconductor element and to bond the semiconductor element to the substrate in connection with the bonding operation.
Dependencies are inferred from the claim text.