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US 12,628,664 B2Granted
Metal component
AssigneeMitsui High-Tec, Inc.
InventorsKimihiko Kubo, Ryota Furuno, Tomokatsu Kunitake
Life of this patent
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Abstract
Provided is a metal component that is used for manufacturing a semiconductor device, the metal component including a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer.
Claims3
A metal component that is used for manufacturing a semiconductor device,
- the metal component comprising:
- a substrate having a conductivity;
- and
- a noble metal plating layer formed on all or part of a surface of the substrate, wherein
- the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer,
- the noble metal plating layer contains Ag as a main component, and
- a ratio of crystal orientation <111> to crystal orientation <001> is 2 or more in the noble metal plating layer.
4 more elements
Dependencies are inferred from the claim text.