Method for selectively forming a shielding layer on a semiconductor device
OwnerSeongHwan Park, Bom Lee +1inventors
InventorsSeongHwan Park, Bom Lee, KyoungHee Park
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Abstract
A method for selectively forming a shielding layer on a semiconductor device comprises: attaching a tape stack onto a predetermined area of a substrate of the semiconductor device, wherein the tape stack comprises a lower tape layer that covers the predetermined area and an upper tape layer that extends beyond the predetermined area and overhangs above an intermediate area adjacent to the predetermined area; applying a shielding layer to the substrate of the semiconductor device; and removing the tape stack and a portion of the shielding layer formed on the tape stack from the substrate of the semiconductor device.
Claims12
A method for selectively forming a shielding layer on a semiconductor device, the method comprising:
- attaching a tape stack onto a predetermined area of a substrate of the semiconductor device, wherein the tape stack comprises a lower tape layer that covers the predetermined area and an upper tape layer that extends beyond the predetermined area and overhangs above an intermediate area adjacent to the predetermined area;
- applying a shielding layer to the substrate of the semiconductor device;
- and
- removing the tape stack and a portion of the shielding layer formed on the tape stack from the substrate of the semiconductor device.
Dependencies are inferred from the claim text.