Supporting sealant layer structure for stacked die application

A method, comprising:

• forming a first layer of a silazane-based compound, to a thickness that is included in a range of approximately one micron to approximately twenty microns, over a portion of a first integrated circuit die;
• forming a first dielectric layer over the first layer of the silazane-based compound;
• forming a second layer of the silazane-based compound over a portion of a second integrated circuit die;
• forming a second dielectric layer over the second layer of the silazane-based compound;
• and
• joining the first dielectric layer and the second dielectric layer.

A device, comprising:

• a first bonding layer;
• a first layer of a siloxane-based compound or a silazane-based compound between the first bonding layer and a first integrated circuitry,
• wherein the first integrated circuitry is associated with a first integrated circuit die;
• a second bonding layer joined with the first bonding layer;
• a second layer of the siloxane-based compound or the silazane-based compound between the second bonding layer and a second integrated circuitry,
• wherein the second integrated circuitry is associated with a second integrated circuit die;
• a first set of connection structures interspersed through the first bonding layer and the first layer of the siloxane-based compound or the silazane-based compound;
• and
• a second set of connection structures interspersed through the second bonding layer and the first layer of the siloxane-based compound or the silazane-based compound,
• wherein the second set of connection structures joins with the first set of connection structures.