Copper/ceramic assembly and insulating circuit substrate
AssigneeMitsubishi Materials Corporation
InventorNobuyuki Terasaki
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Abstract
This copper/ceramic assembly includes: a copper member consisting of copper or a copper alloy; and a ceramic member consisting of silicon nitride, wherein the copper member and the ceramic member are bonded. At a bonded interface between the ceramic member and the copper member, an active metal nitride layer is formed on a side of the ceramic member. In a region extending by 10 μm from the active metal nitride layer toward a side of the copper member, an area rate of an active metal compound containing Si and an active metal is 10% or less. A ratio PA/PB of an area rate PA of the active metal compound in a peripheral part region of the copper member to an area rate PB of the active metal compound in a central part region of the copper member is in a range of 0.7 or more and 1.4 or less.
Claims8
A copper/ceramic assembly obtained by bonding a copper member consisting of copper or a copper alloy and a ceramic member consisting of silicon nitride,
- wherein at a bonded interface between the ceramic member and the copper member, an active metal nitride layer is formed on a side of the ceramic member,
- in a region extending by 10 μm from the active metal nitride layer toward a side of the copper member, an area rate of an active metal compound containing Si and an active metal is 10% or less, and
- a ratio PA/PB of an area rate PA of the active metal compound in a peripheral part region of the copper member to an area rate PB of the active metal compound in a central part region of the copper member is in a range of 0.7 or more and 1.4 or less.
An insulating circuit substrate obtained by bonding a copper sheet consisting of copper or a copper alloy to a surface of a ceramic substrate consisting of silicon nitride,
- wherein at a bonded interface between the ceramic substrate and the copper sheet, an active metal nitride layer is formed on a side of the ceramic substrate,
- in a region extending by 10 μm from the active metal nitride layer toward a side of the copper sheet, an area rate of an active metal compound containing Si and an active metal is 10% or less, and
- a ratio PA/PB of an area rate PA of the active metal compound in a peripheral part region of the copper sheet to an area rate PB of the active metal compound in a central part region of the copper sheet is in a range of 0.7 or more and 1.4 or less.
Dependencies are inferred from the claim text.