Substrate processing apparatus

A substrate processing apparatus comprising:

• an outer tube that defines a protective space;
• an inner tube that defines a reaction space, wherein a portion of the inner tube is in the outer tube;
• an outer manifold configured to support the outer tube and define a first inner space connected to the protective space, the outer manifold including an outer gas supply port and an outer gas exhaust port on a circumference of a sidewall thereof;
• an inner manifold configured to support the inner tube and define a second inner space connected to the reaction space, the inner manifold including an inner gas supply port and an inner gas exhaust port on a circumference of a sidewall thereof;
• a first gas supply line coupled to the protective space and a second gas supply line coupled to the reaction space;
• a first gas exhaust line coupled to the protective space and a second gas exhaust line coupled to the reaction space;
• a vacuum pump;
• an inner vacuum pumping line disposed between the reaction space and the vacuum pump;
• an outer vacuum pumping line disposed between the protective space and the vacuum pump;
• a scrubber connected to an output of the vacuum pump;
• a first high pressure control part disposed between the first gas exhaust line and an output of the vacuum pump and disposed between the first gas exhaust line and the scrubber;
• and
• a second high pressure control part disposed between the second gas exhaust line and the output of the vacuum pump and disposed between the second gas exhaust line and the scrubber;
• wherein the vacuum pump, the first high-pressure control part, and the second high-pressure control part are configured to control a pressure of the reaction space and control a pressure of the protective space, such that a high-pressure process conducted at a pressure higher than atmospheric pressure and a low-pressure process conducted at a pressure lower than atmospheric pressure are performed in the reaction space as well as on a semiconductor substrate in the reaction space;
• wherein protective space pressure is maintained at a pressure higher than reaction space pressure when a high-pressure process is performed in the reaction space;
• wherein the first high-pressure control part comprises:
• a first high-pressure exhaust valve on the first gas exhaust line;
• and
• a first high-pressure control valve between the first high-pressure exhaust valve and the output of the vacuum pump, the first high-pressure control valve configured to control an amount of a gas exhausted from the protective space;
• wherein the second high-pressure control part comprises:
• a second high-pressure exhaust valve on the second gas exhaust line;
• and
• a second high-pressure control valve between the second high-pressure exhaust valve and the output of the vacuum pump, the second high-pressure control valve configured to control an amount of a gas exhausted from the reaction space.