Apparatus and system for substrate processing

An apparatus for substrate processing, comprising:

• a dual-chamber body comprising:
• a first processing volume on a first side of a reference plane,
• a second processing volume on a second side of the reference plane,
• a first plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the first processing volume, the first plurality of gas inject passages respectively comprising at least a section in the dual-chamber body, the sections of the first plurality of gas inject passages in the dual-chamber body positioned as a plurality of inject levels along the dual-chamber body,
• a second plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the second processing volume,
• a first exhaust port formed in the dual-chamber body opposite the first plurality of gas inject passages, the first exhaust port in fluid communication with the first processing volume, and
• a second exhaust port formed in the dual-chamber body opposite the second plurality of gas inject passages, the second exhaust port in fluid communication with the second processing volume;
• one or more heat sources configured to generate heat;
• a first pedestal assembly positioned in the first processing volume;
• and
• a second pedestal assembly positioned in the second processing volume.

A system for substrate processing, comprising:

• a dual-chamber body comprising:
• a first processing volume on a first side of a reference plane,
• a second processing volume on a second side of the reference plane,
• a first plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the first processing volume, the first plurality of gas inject passages respectively comprising at least a section in the dual-chamber body, the sections of the first plurality of gas inject passages in the dual-chamber body positioned as a plurality of inject levels along the dual-chamber body,
• a second plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the second processing volume,
• a first exhaust port formed in the dual-chamber body opposite the first plurality of gas inject passages, the first exhaust port in fluid communication with the first processing volume, and
• a second exhaust port formed in the dual-chamber body opposite the second plurality of gas inject passages, the second exhaust port in fluid communication with the second processing volume;
• a first pedestal assembly positioned in the first processing volume;
• a second pedestal assembly positioned in the second processing volume;
• and
• one or more side heat sources positioned outwardly of one or more of the first processing volume or the second processing volume;
• a shared gas panel in fluid communication with both the first plurality of gas inject passages and the second plurality of gas inject passages;
• and
• a shared exhaust conduit in fluid communication with both the first exhaust port and the second exhaust port.