Method of removing a by-product from a component of a semiconductor apparatus

A method of removing a nitride-containing by-product from a component of a semiconductor apparatus, comprising:

• heating the component to a predetermined temperature for a predetermined duration between 2 and 36 hours, wherein the nitride-containing by-product is transformed into an oxide-containing or oxynitride-containing product by the heating;
• cooling the component from the predetermined temperature to a room temperature;
• rinsing the component with an acid solution including HF and HNO3 at the room temperature after the cooling of the component;
• and
• washing the oxide-containing or oxynitride-containing product and the acid solution off the component.

A method of removing a nitride-containing by-product from a component of a semiconductor apparatus, comprising:

• providing the component in a chamber, wherein a surface of the component is at least partially covered by the nitride-containing by-product and at least one through hole of the component extends through the component and is at least partially contained with the nitride-containing by-product;
• injecting a gas into the chamber;
• heating the component to cause the nitride-containing by-product to react with the gas to form an oxide-containing or oxynitride-containing product on the component;
• cooling the component from the predetermined temperature to a temperature below 50° C.;
• rinsing the oxide-containing or oxynitride-containing product with an acid solution at the temperature below 50° C., wherein the acid solution includes HF and HNO3;
• and
• removing the acid solution and the oxide-containing or oxynitride-containing product from the component to expose the surface and the through hole of the component.