Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same
AssigneeKorea Advanced Institute of Science and Technology
InventorsKibum Kang, Taesoo Kim
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Abstract
Provided is a method for preparing a transition metal chalcogenide film, which includes: a step of injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate; and a step of forming a transition metal chalcogenide film on the substrate through a chemical reaction between the precursor for preparing a transition metal chalcogenide and the organometallic promoter.
Claims14
A method for preparing a transition metal chalcogenide film, comprising:
- injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate from outside the chamber;
- and
- forming the transition metal chalcogenide film on the substrate through a chemical reaction between the precursor for preparing the transition metal chalcogenide and the organometallic promoter in the chamber,
- wherein, prior to injecting the precursor, the chamber is controlled to maintain a temperature higher than a decomposition temperature of the precursor for preparing the transition metal chalcogenide and the organometallic promoter, thereby causing the injected precursor for preparing the transition metal chalcogenide and the organometallic promoter to decompose in a gas phase and react with each other within the chamber.
An organometallic promoter for preparing a transition metal chalcogenide film, wherein the organometallic promoter is an alkali metal organic compound and the alkali metal organic compound is decomposed at a temperature lower than a formation temperature of the transition metal chalcogenide film.
Dependencies are inferred from the claim text.