Light-emitting diode including an active layer disposed between a first semiconductor layer and a second semiconductor layer and display device comprising same

A display device comprising:

• a first substrate;
• a first electrode on the first substrate;
• a second electrode on the first electrode;
• a first light-emitting element and a second light-emitting element between the first electrode and the second electrode, each of the first light-emitting element and the second light-emitting element comprising one end electrically connected to the first electrode, and the other end electrically connected to the second electrode;
• and
• a first insulating layer between the first electrode and the second electrode to partially surround an outer surface of each of the first light-emitting element and the second light-emitting element,
• wherein each of the first light-emitting element and the second light-emitting element comprises:
• a first semiconductor layer doped with a first type of dopant;
• a second semiconductor layer doped with a second type of dopant different from the first type of dopant;
• and
• an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of each of the first light-emitting element and the second light-emitting element in a first direction, in which the first semiconductor layer, the active layer, and the second semiconductor layer are arranged, is less than a width thereof in a second direction that is perpendicular to the first direction, and
• wherein a distance between the active layer of the first light-emitting element and the first substrate is different from a distance between the active layer of the second light-emitting element and the first substrate.