Light-emitting diode epitaxial structure and manufacturing method thereof, and light-emitting diode device

A light-emitting diode (LED) device, comprising an n electrode, a p electrode, and an LED epitaxial structure comprising an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked,

• wherein the p-type waveguide layer comprises a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked,
• wherein the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer comprises at least two oxide layers of aluminumygallium1-yarsenide (AlyGa1-yAs) and at least one (aluminumxgallium1-x)0.5indium0.5phosphorus ((AlxGa1-x)0.5In0.5P) layer that are stacked, and the (AlxGa1-x)0.5In0.5P layer and the oxide layers of AlyGa1-yAs are alternately stacked,
• wherein the number of oxide layers of AlyGa1-yAs is one more than the number of (AlxGa1-x)0.5In0.5Players, and two layers among the at least two oxide layers of AlyGa1-yAs are respectively disposed close to the first p-type waveguide sub-layer and the second p-type waveguide sub-layer, and
• wherein the n electrode is electrically coupled with the n-type confinement layer, and the p electrode is electrically coupled with the p-type confinement layer.

A manufacturing method of a light-emitting diode (LED) epitaxial structure, comprising:

• providing a substrate;
• forming an n-type confinement layer on the substrate;
• forming an n-type waveguide layer on one side of the n-type confinement layer away from the substrate;
• forming a light-emitting layer on one side of the n-type waveguide layer away from the n-type confinement layer;
• forming a p-type waveguide layer on one side of the light-emitting layer away from the n-type waveguide layer, wherein forming the p-type waveguide layer comprises forming, on one side of the light-emitting layer away from the n-type waveguide layer, a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, and the electron blocking layer comprises at least two oxide layers of aluminumygallium1-yarsenide (AlyGa1-yAs);
• and
• forming a p-type confinement layer on one side of the p-type waveguide layer away from the light-emitting layer,
• wherein forming the electron blocking layer comprises:
• forming an AlyGa1-yAs layer on one side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, trimethylgallium (TMGa), and trimethylaluminium (TMAl);
• forming an (aluminumxgallium1-x)0.5indium0.5phosphorus(AlxGa1-x)0.5In0.5P) layer on one side of the AlyGa1-yAs layer away from the first p-type waveguide sub-layer by introducing phosphine, TMGa, TMAl, and trimethylindium;
• forming, on the side of the first p-type waveguide sub-layer away from the light-emitting layer, AlyGa1-yAs layers and (AlxGa1-x)0.5In0.5P layers that are alternately stacked by repeatedly and alternately forming the AlyGa1-yAs layers and the (AlxGa1-x)0.5In0.5P layers;
• and
• forming the oxide layers of AlyGa1-yAs by oxidizing the AlyGa1-yAs layers.