Quantum dot light emitting structure, method for manufacturing the same, array substrate, and display device

An array substrate, comprising:

• a base substrate;
• and
• a plurality of light emitting elements located on the base substrate,
• wherein at least one of the plurality light emitting elements comprises:
• an electrode, located on the base substrate;
• an electron transport layer located at a side of the electrode away from the base substrate;
• a quantum dot light emitting layer, located at a side of the electron transport layer away from the electrode layer,
• wherein the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer,
• the electron transport layer comprises N+1 electron transport sub-layers, the electron blocking layer comprises N electron blocking sub-layers, the N electron blocking sub-layers are respectively sandwiched among the N+1 electron transport sub-layers, a sum of thicknesses of the N electron blocking sub-layers is in a range from 0.5 nm to 5 nm,
• a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is larger than a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.

A method for manufacturing a quantum dot light emitting structure, comprising:

• forming a first electrode;
• forming an electron transport layer on the first electrode;
• and
• forming a quantum dot light emitting layer, on a side, away from the first electrode, of the electron transport layer,
• wherein the method further comprises forming an electron blocking layer in the electron transport layer,
• a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is larger than a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.