Heterogeneous chip integration of III-nitride-based materials for optoelectronic device arrays in the visible and ultraviolet

A heterogenous integration process, comprising:

• epitaxially bonding wide band gap semiconductor materials with a silicon carrier wafer, wherein the wide band gap semiconductor materials are grown on a non-native substrate;
• removing the non-native substrate from the wide band gap semiconductor materials;
• defining and deriving an array of wide band gap semiconductor islands;
• establishing a metal layer over the array of wide band gap semiconductor islands, resulting in an array of metal-coated wide band gap semiconductor islands;
• epitaxially transferring the array of metal-coated wide band gap semiconductor islands to a surface of a host wafer;
• forming a eutectic bond between the array of metal-coated wide band gap semiconductor islands and the surface of the host wafer, wherein one or more metal layer portions of the eutectic bond function as a mirror that provides reflectivity spanning a visible spectrum and an ultraviolet (UV) spectrum;
• removing the silicon carrier wafer;
• obtaining a second device that includes a second silicon carrier wafer having a second array of metal-coated wide band gap semiconductor islands, wherein the second device is derived according to one or more steps that correspond to one or more of the bonding, the removing of the non-native substrate, the defining and deriving, and the establishing;
• using an optical alignment tool to align the second silicon carrier wafer relative to the host wafer to position the second array of metal-coated wide band gap semiconductor islands on the surface of the host wafer relative to the array of metal-coated wide band gap semiconductor islands;
• causing the second array of metal-coated wide band gap semiconductor islands and the surface of the host wafer to eutectically bond;
• and
• removing the second silicon carrier wafer, thereby resulting in an integrated arrangement of wide band gap semiconductor islands on the host wafer in which the second array of metal-coated wide band gap semiconductor islands is interleaved with the array of metal-coated wide band gap semiconductor islands.

An integration method, comprising:

• epitaxially bonding III-Nitride materials with a silicon carrier wafer, wherein the III-Nitride materials are grown on a non-native substrate;
• removing the non-native substrate from the III-Nitride materials;
• defining and deriving an array of III-Nitride islands;
• establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands;
• epitaxially transferring the array of metal-coated III-Nitride islands to a surface of a host wafer;
• forming a eutectic bond between the array of metal-coated III-Nitride islands and the surface of the host wafer, thereby mechanically securing the array of metal-coated III-Nitride islands to the host wafer;
• removing the silicon carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer;
• obtaining a second device that includes a second silicon carrier wafer having a second array of metal-coated III-Nitride islands, wherein the second device is derived according to one or more steps that correspond to one or more of the bonding, the removing, the defining and deriving, and the establishing;
• using an alignment tool to align the second silicon carrier wafer relative to the host wafer to position the second array of metal-coated III-Nitride islands on the surface of the host wafer relative to the integrated arrangement of III-Nitride islands;
• causing the second array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond;
• and
• removing the second silicon carrier wafer, thereby resulting in a further integrated arrangement of III-Nitride islands on the host wafer in which the second array of metal-coated III-Nitride islands is interleaved with the integrated arrangement of III-Nitride islands.