Passivation method for a passage opening of a wafer
AssigneeAZUR SPACE Solar Power GmbH
InventorAlexander Frey
Life of this patent
Estimating the term…
Abstract
A passivation method for a passage opening of a wafer, at least having the steps of: providing a wafer having a top, a bottom and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate that forms the bottom of the wafer, a Ge sub-cell, at least two III-V sub-cells, in the named order, and at least one passage opening extending from the top to the bottom of the wafer, with a contiguous side wall and a circumference that is oval in cross section, and applying a dielectric insulating layer by means of chemical vapor deposition to the top of the wafer, the bottom of the wafer and the side wall of the passage opening.
Claims11
A passivation method comprising:
- providing a wafer having a top, a bottom and at least two solar cell stacks, each of the at least two solar cell stacks has a Ge substrate that forms the bottom of the wafer, a Ge sub-cell, at least two III-V sub-cells and at least one passage opening extending from the top to the bottom of the wafer with a contiguous side wall and a circumference that is oval in cross section, the at least one passage opening having a first open end having a first diameter at the top of the wafer and a second open end having a second diameter at the bottom of the wafer, the second diameter being smaller than the first diameter;
- and
- after said providing the wafer with the at least one passage opening, applying a dielectric insulating layer via chemical vapor deposition to the top of the wafer, the bottom of the wafer and the side wall of the at least one passage opening,
- wherein the dielectric insulating layer is applied via a plasma-assisted vapor deposition,
- wherein the dielectric insulating layer contains SiOx or SiNx, and
- wherein the at least one passage opening has two stepped circumferential shoulders formed by a sudden decrease in a diameter of the at least one passage opening viewed from a top.
A passivation method comprising:
- providing a wafer having a top, a bottom and at least two solar cell stacks, each of the at least two solar cell stacks has a Ge substrate that forms the bottom of the wafer, a Ge sub-cell, at least two III-V sub-cells and at least one passage opening extending from the top to the bottom of the wafer with a contiguous side wall and a circumference that is oval in cross section, the at least one passage opening having two stepped circumferential shoulders formed by a sudden decrease in a diameter of the at least one passage opening viewed from a top, the at least one passage opening having a first open end having a first diameter at the top of the wafer and a second open end having a second diameter at the bottom of the wafer, the second diameter being smaller than the first diameter;
- and
- after said providing the wafer with the at least one passage opening, applying a dielectric insulating layer via chemical vapor deposition to the top of the wafer, the bottom of the wafer and the side wall of the passage opening.
Dependencies are inferred from the claim text.