Method of manufacturing terahertz detection device, and detection apparatus

A method of manufacturing a terahertz detection device, the terahertz detection device comprising detectors and lenses arranged in an array, wherein the method comprises:

• forming a plurality of detectors in a first area of a first surface of a base substrate through a double-sided photoetching process so as to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate;
• forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process, and providing at least one second alignment mark in a fourth area of the second surface of the base substrate;
• and
• mounting the lenses to the lens mounting parts to form the terahertz detection device,
• wherein after the first alignment mark is provided and before the second alignment mark is provided, a position of the second alignment mark is determined by using a double-sided photoetching machine to align the first alignment mark with the second alignment mark, so that an offset of a center of the detector with respect to a center of the lens mounting part is within a preset range of 0 to 10 μm;
• wherein the forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process comprises:
• coating a photoresist on the second surface of the base substrate, wherein a coating thickness of the photoresist is in a range of 3 to 5 μm;
• drying, exposing, and developing the photoresist;
• and etching the base substrate to form the lens mounting parts;
• and
• wherein an etching depth of the lens mounting part is greater than or equal to 30 μm.