Quantum detector with vertically stacked structure

Abstract

A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi2Te3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved. The whole device achieves low energy consumption and extended use life.

Dependencies are inferred from the claim text.