Post-replacement metal gate (RMG) gate cut for performance enhanced FinFET
AssigneeQUALCOMM Incorporated
InventorsMing-Huei Lin, Haining Yang, Junjing Bao
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Abstract
A fin field effect transistor (FinFET) is described. The FinFET includes a substrate and a shallow trench isolation (STI) region on the substrate. The FinFET also includes a first fin structure on the substrate and extending through the STI region. The FinFET further includes a second fin structure on the substrate and extending through the STI region. The FinFET also includes a metal gate on the STI region, on the first fin structure, and on the second fin structure. The metal gate is composed of a first sub-metal gate cut line filled with a first stressor material, and a second sub-metal gate cut line filled with a second stressor material different from the first stressor material.
Claims8
A fin field effect transistor (FinFET), comprising:
- a substrate;
- a shallow trench isolation (STI) region on the substrate;
- a first fin structure on the substrate and extending through the STI region;
- a second fin structure on the substrate and extending through the STI region;
- and
- a metal gate on the STI region, on the first fin structure, and on the second fin structure;
- a first sub-metal gate cut line filled with a first stressor material;
- and
- a second sub-metal gate cut line filled with a second stressor material different from the first stressor material, in which the first sub-metal gate cut line and the second sub-metal gate cut line extend through the metal gate, through the STI region, and into the substrate beyond a base of the first fin structure and the second fin structure on the substrate.
Dependencies are inferred from the claim text.