Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device
AssigneeRenesas Electronics Corporation
InventorTadashi Yamaguchi
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Abstract
A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the second metal crystal grains has no dislocations. The number of the first metal crystal grains having the dislocations is larger than the number of the second metal crystal grains having no dislocations.
Claims8
A metal film comprising:
- a plurality of first metal crystal grains having dislocations and
- a plurality of second metal crystal grains not having the dislocations, wherein
- a number of the plurality of first metal crystal grains is greater than a number of the plurality of second metal crystal grains.
A semiconductor device comprising:
- a metal film including a plurality of first metal crystal grains each having dislocations and a plurality of second metal crystal grains each not having the dislocations, wherein
- a number of the plurality of first metal crystal grains is greater than a number of the plurality of second metal crystal grains, and
- the metal film is comprised as a bonding pad or a wiring.
Dependencies are inferred from the claim text.