Performance optimization by sizing gates and source/drain contacts differently for different transistors

A device, comprising:

• a first gate disposed over a substrate;
• a first source/drain disposed in a first portion of the substrate adjacent to the first gate;
• a first source/drain contact disposed over the first source/drain;
• a second gate disposed over the substrate;
• a second source/drain disposed in a second portion of the substrate adjacent to the second gate;
• and
• a second source/drain contact disposed over the second source/drain;
• wherein:
• the first gate is wider than the second gate in a first horizontal direction;
• the first source/drain contact is narrower than the second source/drain contact in the first horizontal direction;
• the first gate and the first source/drain are components of a first type of transistor;
• the second gate and the second source/drain are components of a second type of transistor different from the first type of transistor;
• the first type of transistor is part of a memory device;
• and
• the second type of transistor is part of a non-memory device.

A device, comprising:

• a first gate disposed over a substrate;
• a first source/drain disposed in a first portion of the substrate adjacent to the first gate;
• a first source/drain contact disposed over the first source/drain;
• a second gate disposed over the substrate;
• a second source/drain disposed in a second portion of the substrate adjacent to the second gate;
• and
• a second source/drain contact disposed over the second source/drain;
• wherein:
• the first gate is wider than the second gate in a first horizontal direction;
• the first source/drain contact is narrower than the second source/drain contact in the first horizontal direction;
• the first gate and the first source/drain are components of a first type of transistor;
• the second gate and the second source/drain are components of a second type of transistor different from the first type of transistor;
• the first type of transistor is part of a non-memory device;
• and
• the second type of transistor is part of a memory device.