Integral electronic stack

An integral electronic stack comprising:

• a first electrically conductive adhesive layer, a second electrically conductive adhesive layer, a third electrically conductive adhesive layer;
• a flexible metal film which is disposed between the first electrically conductive adhesive layer and the second electrically conductive adhesive layer, and is bonded to the first electrically conductive adhesive layer and the second electrically conductive adhesive layer;
• and
• a second electrically conductive film which is disposed between the second electrically conductive adhesive layer and the third electrically conductive adhesive layer, and is bonded to the second electrically conductive adhesive layer and the third electrically conductive adhesive layer,
• wherein each of the first to third electrically conductive adhesive layers comprises a plurality of electrically conductive elements substantially distributed in an electrically insulative material,
• wherein, when a conductive circuit is provided by the steps of:
• providing a first gold microstrip and a second gold microstrip which are spaced apart from each other;
• arranging a same stainless steel plate on the first gold microstrip and the second gold microstrip;
• and
• arranging a multi-layer stack and a multi-layer stack which is substantially similar to the multi-layer stack between the stainless steel plate and the first gold microstrip, and the second gold microstrip, such that the first electrically conductive adhesive layers of the two multi-layer stacks are bonded to the same surface of the stainless steel plate, and the third electrically conductive adhesive layers of the two multi-layer stacks are bonded to the first gold microstrip and the second gold microstrip, respectively,
• if a first current signal and a second current signal which have strengths I1 and I2, respectively, which are substantially the same, and frequencies F1 and F2 which are different, are applied to the first gold microstrip, simultaneously, an intermodulation current signal that has a same frequency F3 as nF1+mF2 (m and n are positive or negative integers, not 0) is reflected by an electrical signal of strength I3, −150≤I3/I1≤−30 dB.

An integral electronic stack comprising

• a plurality of first electrically conductive flexible layer and a plurality of second electrically conductive flexible layer which alternate with each other,
• wherein the one or more first electrically conductive flexible layers are metal layers, and each of the plurality of second electrically conductive flexible layers is an adhesive layer that comprises a plurality of electrically conductive elements substantially distributed in an electrically insulative material,
• wherein an electrically grounded first circuit is formed by arranging an integral first multi-layer stack between a first board and a second board, the first board being substantially rigid such that the integral first multi-layer stack is bonded to the first board and the second board, respectively, the second board being electrically grounded and being substantially rigid,
• wherein an electrically grounded second circuit is formed by the steps of:
• providing an integral first partial multi-layer stack comprising only some of a plurality of layers of the integral first multi-layer stack, and an integral second partial multi-layer stack comprising some of the others of the plurality of layers of the integral first multi-layer stack:
• forming a first partial second circuit by bonding the integral first partial multi-layer stack to the first board, and forming a second partial second circuit by bonding the integral second partial multi-layer stack to the second board;
• and
• forming a second circuit by bonding the first partial second circuit and the second partial second circuit to each other, such that the integral second multi-layer stack is disposed between the first board and the second board,
• wherein the integral first multi-layer stack and the integral second multi-layer stack are substantially similar to each other, and have a same layer order from the first board to the second board, and
• wherein the second boards of the first circuit and the second circuit generate passive intermodulation signals I1 and I2, respectively, and the I1 is smaller than the I2 by between 5 dB and 80 dB.