Active material, all solid state battery, and methods for producing active material
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsMitsutoshi Otaki, Jun Yoshida, Tetsuya Waseda, Masanori Harata, Tatsuya Eguchi
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Abstract
A main object of the present disclosure is to provide an active material wherein the volume variation of an electrode layer during charge/discharge may be suppressed. The present disclosure achieves the object by providing an active material used for an all solid state battery, the active material comprising at least Si, and in infrared spectrum, when a maximum peak intensity in 900 cm−1 or more and 950 cm−1 or less is regarded as I1, and a maximum peak intensity in 1000 cm−1 or more and 1100 cm−1 or less is regarded as I2, the I1 and the I2 satisfy 0.55≤I2/I1≤1.0, and 0.01≤I1.
Claims9
An active material for an all solid state battery, the active material comprising at least Si, and
- in an infrared spectrum, when a maximum peak intensity in 900 cm−1 or more and 950 cm−1 or less is regarded as I1, and a maximum peak intensity in 1000 cm−1 or more and 1100 cm−1 or less is regarded as I2, the I1 and the I2 satisfy 0.55≤I2/I1≤1.0;
- wherein:
- the active material comprises at least one of a silicon clathrate II type crystal phase or a silicon clathrate I type crystal phase;
- the active material includes a void inside a primary particle;
- and
- a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.
A method for producing an active material for an all solid state battery, the active material comprising at least Si, in an infrared spectrum, when a maximum peak intensity in 900 cm−1 or more and 950 cm−1 or less is regarded as I1, and a maximum peak intensity in 1000 cm−1 or more and 1100 cm−1 or less is regarded as I2, the I1 and the I2 satisfy 0.55≤I2/I1≤1.0, the active material comprises at least one of a silicon clathrate II type crystal phase or a silicon clathrate I type crystal phase, the active material includes a void inside a primary particle, a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less, the method comprising:
- a synthesizing step of synthesizing a first precursor,
- a washing step of obtaining a second precursor by washing the first precursor with an organic solvent or an acid having specific dielectric constant of 5 or more, and
- a drying step of obtaining the active material by drying the second precursor by heat.
Dependencies are inferred from the claim text.