Processing device and electronic device having the same

A processing device comprising:

• a bitcell including:
• a variable resistor layer including a plurality of active variable resistors;
• an active layer including a plurality of switches configured to control either one of a voltage to be applied between ends of each of the active variable resistors and a current flowing to each of the active variable resistors;
• and
• a plurality of metal layers including wires electrically connecting the active variable resistors to the switches,
• wherein the variable resistor layer comprises at least one via penetrating through the variable resistor layer and directly connecting at least one of the switches of the bitcell to at least one active variable resistor of another bitcell.

An electronic device comprising:

• a neural network device;
• and
• a processor configured to control a function of the neural network device,
• wherein the neural network device comprises a plurality of bitcells, each of the plurality of bitcells including:
• a variable resistor layer including a plurality of active variable resistors and a plurality of inactive variable resistors;
• an active layer including a plurality of switches configured to control either one of a voltage to be applied to ends of each of the active variable resistors and a current flowing to each of the active variable resistors;
• and
• a plurality of metal layers including wires electrically connecting the active variable resistors to the switches, and
• wherein at least one of the plurality of bitcells comprises a via penetrating through the variable resistor layer and directly connecting at least one of the switches of the at least one of the plurality of bitcells to at least one of the active variable resistors of another one of the plurality of bitcells.

An electronic device comprising:

• a neural network device;
• and
• a processor configured to control a function of the neural network device,
• wherein the neural network device comprises a bitcell including:
• a variable resistor layer including a plurality of active variable resistors and a plurality of inactive variable resistors;
• an active layer including a plurality of switches configured to control either one of a voltage to be applied to both ends of each of the active variable resistors and a current flowing to each of the active variable resistors;
• and
• a plurality of metal layers including wires electrically connecting the active variable resistors to the switches, and
• the variable resistor layer comprises at least one via penetrating through the variable resistor layer and directly connecting at least one of the switches of the bitcell to at least one active variable resistor of another bitcell.

A processing device comprising:

• a plurality of bitcells, wherein at least one of the plurality of bitcells comprises:
• a plurality of active variable resistors and a plurality of inactive variable resistors;
• a plurality of switches configured to control either one of a voltage to be applied to the active variable resistors and a current flowing to the active variable resistors;
• and
• a via serially connecting at least one of the switches to at least one of the active variable resistors, wherein the via is distanced further from the active variable resistors than the inactive variable resistors.