EUV resist underlayer film-forming composition
AssigneeNissan Chemical Corporation
InventorsShou Shimizu, Mamoru Tamura
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Abstract
A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of a (meth)acrylic polymer and further includes a solvent, but does not include a polymer other than the (meth)acrylic polymer. The organic group is an acyloxy group that has an amino group substituted with a protective group, or that has a nitrogen-containing heterocycle substituted with a protective group.
Claims9
An EUV resist underlayer film-forming composition comprising a (meth)acrylic polymer having a basic organic group substituted with a protecting group on a side chain thereof and further comprising an organic solvent, and comprising no polymer other than the (meth)acrylic polymer,
- wherein the protecting group is selected from a benzyloxycarbonyl group, a 9-fluorenylmethyloxycarbonyl group, a 2,2,2-trichloroethoxycarbonyl group and an allyloxycarbonyl group.
Dependencies are inferred from the claim text.