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US 12,625,108 B2Granted
Sensor element for gas sensor having nanorod structure and manufacturing method thereof, and gas sensor
AssigneeHongik University Industry-Academia Cooperation Foundation
InventorJung Hwan Seo
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Abstract
A sensor element for a gas sensor has a substrate, and a channel formed in the substrate and configured to allow gases to flow therein, wherein the channel has nanoscale nanorods inside, the nanorods interfering with a flow of gaseous phase materials in the gases flowing in the channel, and the gas sensor has the sensor element for the gas sensor, and a detection sensor to detect the gaseous phase materials exiting the sensor element for the gas sensor.
Claims18
A sensor element for a gas sensor, comprising:
- a substrate;
- and
- a channel formed in the substrate and configured to allow gases to flow to a detection sensor that is configured to detect gaseous phase materials in the gas sensor,
- wherein the channel has nanoscale nanorods inside, the nanorods interfering with a flow of the gaseous phase materials in the gases flowing in the channel,
- wherein the channel is formed based on a groove formed in the substrate by etching,
- wherein the nanorods are formed based on an unetched portion of the substrate other than the groove, and
- wherein lengths of the nanorods vary and the nanorods protrude irregularly from a bottom of the channel.
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A method for manufacturing a sensor element for a gas sensor, the method comprising:
- preparing a substrate;
- forming a masking layer on the substrate;
- removing the masking layer corresponding to an area in which a channel will be formed;
- and
- etching a groove in the substrate to form the channel,
- wherein the masking layer is etched together during the etching and a material of the masking layer breaks down into nanoparticles, and the nanoparticles accumulate within the groove and act as a micro-mask, and
- wherein a portion of the substrate that is not etched by the micro-mask forms nanorods in the channel,
- wherein an auxiliary wall is formed between channel walls that form the channel, and
- wherein the removing of the masking layer comprises not removing the masking layer corresponding to an area in which the auxiliary wall will be formed within the area in which the channel will be formed.
6 more elements
Dependencies are inferred from the claim text.