Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsNobuo Matsuki, Yoshinori Morisada, Takayuki Komiya, Satoru Kawakami, Taro Ikeda, Toshihiko Iwao
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Abstract
A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.
Claims13
A film forming method that forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, the film forming method comprising:
- (a) supplying a raw material gas to the processing container;
- (b) purging the processing container with a nitrogen gas (N2 gas) and an inert gas;
- and
- (c) generating plasma of the nitrogen gas by supplying a radio-frequency power of 180 MHz or higher and equal to or lower than 220 MHz to the processing container in which the nitrogen gas and the inert gas are supplied.
A film forming method that forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, the film forming method comprising:
- (a) supplying a mixed gas of a raw material gas, a nitrogen gas (N2 gas), and an inert gas to the processing container;
- and
- (b) generating plasma of the nitrogen gas by supplying a radio-frequency power of 180 MHz or higher and equal to or lower than 220 MHz to the processing container in which the nitrogen gas and the inert gas are supplied,
- wherein the substrate includes a first film, and
- wherein, in the step of (b), a second film is formed on the substrate having the first film by the generated plasma.
Dependencies are inferred from the claim text.