Nitride phosphor, and method for producing same
AssigneeNichia Corporation
InventorTakayuki Shinohara
Life of this patent
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Abstract
Provided is a nitride phosphor with high emission intensity. The nitride phosphor includes: a group 1 element(s) including at least one selected from the group consisting of lithium, sodium, and potassium; a group 2 element(s) including at least one selected from the group consisting of magnesium, calcium, strontium, and barium; a group 13 element(s) including at least one selected from the group consisting of aluminum, gallium, and indium; a group 14 element(s) including at least one selected from the group consisting of silicon, germanium, and tin; nitrogen; and cerium. The nitride phosphor includes, as a host crystal, a crystal having the same crystal structure as CaAlSiN3, wherein the internal quantum efficiency upon excitation at 450 nm is not less than 87%.
Claims11
A nitride phosphor comprising:
- a group 1 element(s) including at least one selected from the group consisting of lithium, sodium, and potassium;
- a group 2 element(s) including at least one selected from the group consisting of magnesium, calcium, strontium, and barium;
- a group 13 element(s) including at least one selected from the group consisting of aluminum, gallium, and indium;
- a group 14 element(s) including at least one selected from the group consisting of silicon, germanium, and tin;
- nitrogen;
- and
- cerium;
- the nitride phosphor comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3,
- wherein the internal quantum efficiency upon excitation at 450 nm is not less than 87%, and
- wherein the nitride phosphor has a median diameter of 25 μm to 50 μm.
Dependencies are inferred from the claim text.