Brush for cleaning wafers after chemical mechanical polishing (CMP) process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJhih-Fong Lin, Liqing Wen, Le Lu, Deng-Gao Chen
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Abstract
Brushes for cleaning wafers after a Chemical Mechanical Polishing (CMP) process and methods for fabricating such brushes are provided. An exemplary method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process includes forming a brush configured for contacting the wafers; and, while forming the brush, controlling formation of pores within the brush to a maximum pore dimension, wherein the maximum pore dimension is 1000 nanometers (nm).
Claims20
A method for fabricating a brush, the method comprising:
- forming the brush;
- and
- while forming the brush, controlling formation of pores within the brush to a maximum pore dimension and a minimum pore dimension, wherein the maximum pore dimension is 1000 nanometers (nm) and wherein the minimum pore dimension is 50 nanometers (nm).
A method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process, the method comprising:
- forming the brush with an outer surface configured for contacting the wafers, wherein the outer surface is formed from a material selected from a PVA-copolymer material with a polymer backbone selected from cellulose, lignin, nylon, and polytetrafluoroethylene (PTFE) and a functionalized PVA polymer material with a polymer backbone selected from cellulose, lignin, nylon, and polytetrafluoroethylene (PTFE).
A method for fabricating a brush, the method comprising:
- forming the brush from a material;
- and
- while forming the brush, generating nanobubbles having a maximum diameter of 1000 nanometers (nm) in the material.
Dependencies are inferred from the claim text.