Organometallic compound, precursor composition comprising same, and method for manufacturing thin film using same
AssigneeHansol Chemical Co., Ltd.
InventorsHyo-Suk Kim, Min-Sung Park, Min-Hyuk Nim, Jang-Hyeon Seok, Jung-Woo Park
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Abstract
The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.
Claims8
An organometallic compound represented by the following Chemical Formula 1:
- in Chemical Formula 1,
- M is Mn, Cu, Co, or Ni;
- a is 2;
- b is 1 or 2 (provided that when Mis Co, b is not 2);
- R1 and R2 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms;
- R3 is —OR4 or —NR5R6;
- R4 is hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms;
- and
- R5 and R6 are each independently hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkylsilyl group having 1 to 6 carbon atoms.
Dependencies are inferred from the claim text.