Semiconductor device including through-silicon via (TSV) test device and operating method thereof

A semiconductor device comprising:

• at least two semiconductor chips electrically connected through at least one through-silicon via (TSV);
• and
• a TSV test device arranged on at least one of the at least two semiconductor chips,
• wherein the TSV test device is configured to
• measure at least one test voltage provided by voltage division based on a signal output through the at least one TSV, and
• detect whether the at least one TSV has first to third faults according to the at least one test voltage,
• wherein the TSV test device comprises a voltage divider comprising an upper common zone, a TSV zone, and a lower common zone,
• wherein the upper common zone is connected to each of a power supply voltage and an end of the at least one TSV and comprises a zeroth common resistor and a zeroth common P-channel metal oxide semiconductor (PMOS), and
• wherein the TSV zone comprises the at least one TSV, a first N-type metal-oxide semiconductor (NMOS), and first and second PMOSs each directly connected to the at least one TSV,
• the lower common zone is connected to each of a ground voltage and another end of the at least one TSV and comprises first and second common resistors, and first and second common NMOSs, and
• the at least one test voltage is a PIN voltage corresponding to a voltage of a node connected to the zeroth common PMOS and the first NMOS, or a TSV voltage corresponding to a voltage of a node connected to the first and second common NMOSs in parallel and the second PMOS.