Multichip module supports and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsFrancis J. Carney, Michael J. Seddon
Life of this patent
Estimating the term…
Abstract
Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.
Claims20
A method of forming a semiconductor device package comprising:
- permanently coupling a material to a first semiconductor die and to a second semiconductor die at a largest planar surface, a thickness, or any combination thereof of each of the first semiconductor die and the second semiconductor die;
- and
- reducing a warpage of the largest planar surface of the first semiconductor die and a warpage of the largest planar surface of the second semiconductor die comprised in the semiconductor device package to less than 200 microns through the material;
- wherein the largest planar surface of the first semiconductor die and the largest planar surface of the second semiconductor die lie in a same plane.
A method of forming a semiconductor device package comprising:
- temporarily coupling a material to a first semiconductor die and to a second semiconductor die at a largest planar surface, a thickness, or any combination thereof of each of the first semiconductor die and the second semiconductor die;
- reducing a warpage of the largest planar surface of the first semiconductor die and a warpage of the largest planar surface of the second semiconductor die comprised in the semiconductor device package to less than 200 microns through the material;
- and
- removing the material from the first semiconductor die and the second semiconductor die;
- wherein the largest planar surface of the first semiconductor die and the largest planar surface of the second semiconductor die lie in a same plane.
A method of reinforcing a semiconductor device comprising:
- one of permanently coupling or temporarily coupling a material to a first semiconductor die and to a second semiconductor die coupled together in a single semiconductor device at one of a largest planar surface, a thickness, or any combination of each of the first semiconductor die and the second semiconductor die;
- and
- reducing a warpage of the largest planar surface of the first semiconductor die and the largest planar surface of the second semiconductor die to less than 200 microns through the material;
- wherein the largest planar surface of the first semiconductor die and the largest planar surface the second semiconductor die lie in a same plane when coupled together by the material.
Dependencies are inferred from the claim text.