Semiconductor device with through package via and method therefor

A semiconductor device comprising:

• a package substrate having a top surface, a first trace at the top surface, and a second trace at the top surface;
• a semiconductor die coupled to the package substrate and having an active surface and a die pad at the active surface, wherein the active surface faces the top surface of the package substrate, and the die pad is electrically coupled to the first trace of the package substrate;
• encapsulant covering at least a portion of the semiconductor die and at least a portion of the top surface of the package substrate, wherein the encapsulant has a top surface, the encapsulant including an additive selectively activated by way of a laser;
• a first opening through the encapsulant, wherein the first opening is defined by first sidewalls that extend from the top surface of the encapsulant to the top surface of the package substrate, and the first opening exposes the first trace at the top surface of the package substrate;
• a vertical signal conductor within the first opening, wherein the vertical signal conductor has a first end coupled to the first trace;
• a second opening through the encapsulant, wherein the second opening is defined by second sidewalls that extend from a top surface of the encapsulant to the top surface of the package substrate, the second opening at least partially surrounds the first opening but is separated from the first opening by a portion of the encapsulant, and the second opening exposes the second trace at the top surface of the package substrate;
• and
• a shield conductor within the second opening, wherein the shield conductor at least partially surrounds the signal conductor but is separated from the signal conductor by the portion of the encapsulant, and the shield conductor has a first end coupled to the second trace.