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US 12,622,265 B2Granted
Stacked semiconductor device including a cooling structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJen-Yuan Chang
Life of this patent
Estimating the term…
Abstract
A stacked semiconductor device includes a cooling structure to increase the cooling efficiency of the stacked semiconductor device. The cooling structure includes various types of cooling components integrated into the stacked semiconductor device that are configured to remove and/or dissipate heat from dies of the stacked semiconductor device. In this way, the cooling structure reduces device failures and permits the stacked semiconductor device to operate at greater voltages, greater speeds, and/or other increased performance parameters by removing and/or dissipating heat from the stacked semiconductor device.
Claims20
A stacked semiconductor device, comprising:
- a first die;
- a second die bonded with the first die at a bonding layer;
- a first dielectric layer around side surfaces of the first die;
- a second dielectric layer around side surfaces of the second die;
- and
- a cooling structure including:
- a plurality of heat removal structures configured to remove heat from at least one of the first die or the second die;
- and
- a plurality of vertical heat dissipation structures configured to dissipate the heat,
- wherein a first vertical heat dissipation structure of the plurality of vertical heat dissipation structures is formed in the first dielectric layer,
- wherein second multiple vertical heat dissipation structures, of the plurality of vertical heat dissipation structures, are formed in the second dielectric layer,
- wherein at least one horizontal heat removal structure, of the plurality of heat removal structures, is formed in the bonding layer and above a portion of the first die, and
- wherein the at least one horizontal heat removal structure is physically connected to the first vertical heat dissipation structure and the second multiple vertical heat dissipation structures.
10 more elements
A stacked semiconductor device, comprising:
- a first die;
- a second die bonded with the first die at a bonding layer;
- a first dielectric layer around side surfaces of the first die;
- a second dielectric layer around side surfaces of the second die;
- and
- a thermoelectric cooling structure, that extends into at least a portion of the first die and into at least a portion of the second die, comprising:
- a cold side, included in the first die, configured to cool the first die,
- a hot side, included in the second die, configured to receive heat from the cold side,
- an n-type semiconductor structure that thermally connects the cold side included in the first die and the hot side included in the second die,
- a p-type semiconductor structure that thermally connects the cold side, included in the first die, and the hot side included in the second die,
- a first vertical heat dissipation structure formed in the first dielectric layer,
- a second plurality of vertical heat dissipation structures formed in the second dielectric layer, and
- a horizontal heat removal structure formed in the bonding layer and below a portion of the first die,
- wherein the horizontal heat removal structure is physically connected to the first vertical heat dissipation structure and the second plurality of vertical heat dissipation structures.
11 more elements
A stacked semiconductor device, comprising:
- a first die;
- a second die bonded with the first die at a bonding layer;
- a first dielectric layer around side surfaces of the first die;
- a second dielectric layer around side surfaces of the second die;
- and
- a cooling structure including:
- an inter-die cooling structure formed in and through the first die and the second die,
- wherein the inter-die cooling structure is configured to remove heat from the first die and the second die;
- a plurality of heat removal structures configured to remove heat from at least one of the first die or the second die;
- and
- a plurality of heat dissipation structures configured to remove heat from at least one of the first die or the second die,
- wherein a first heat dissipation structure of the plurality of heat dissipation structures is formed in the first dielectric layer,
- wherein second multiple heat dissipation structures, of the plurality of heat dissipation structures, are formed in the second dielectric layer,
- wherein at least one horizontal heat removal structure, of the plurality of heat removal structures, is formed in the bonding layer and above a portion of the first die, and
- wherein the at least one horizontal heat removal structure is physically connected to the first heat dissipation structure and the second multiple heat dissipation structures.
12 more elements
Dependencies are inferred from the claim text.